Dr. Godofredo García Salgado

G. García Salgado received the PhD from Center of Research and Advanced Studies, National Polytechnic Institute, Mexico City, in 2003. He is currently a Full Professor of the Research Center of Semiconductor Devices, University of Puebla, Mexico.

He has authored or coauthored more than 50 peer-reviewed research journals. His current research interests include optical semiconductor materials, obtained by Hot Filament CVD and Metal Organic CVD as well as optoelectronic devices based in porous silicon.